[8p-N304-1~14] FS.1 Focused Session "AI Electronics"

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[8p-N304-8] Investigation of ZnO-Inclusion Conditions for ZnO-Embedded Porous Alumina Memristors

〇Hideto Aoyama¹, Myo Than Htay Yamamoto¹, Momose Noritaka², Yoshio Hashimoto¹ (1.Shinshu Univ., 2.NIT (KOSEN) Nagano Coll.)

Keywords:

Memristor,ReRAM

Resistance-switching memristors have attracted significant attention due to their indispensability in realizing brain-inspired neuromorphic computers. In this study, we fabricated ZnO-included porous alumina memristors and investigated the optimization of the inclusion conditions to improve their stability. Here, the detailed analysis of device's microstructure and evaluation of the I-V characteristics and the variations in synaptic weight (conductance) in response to stimulation pulses were carried out.