Presentation Information
[8p-PA1-9]Verification of Multilayer Film Thickness Measurement Using Dual-Comb Spectroscopy
〇(B)Yuki Takanashi1, Shogo Onoda1, Naoki Takeshi1, Naoto Takahashi2, Yoshiaki Nakajima1 (1.Toho Univ., 2.Otsuka Electronics)
Keywords:
dual-comb spectroscopy,thin-film thickness measurement,multilayer thin films
With the rapid advancement of semiconductor devices driven by recent developments in artificial intelligence technologies, there is an increasing demand for techniques capable of evaluating the thickness of Si wafers and SiO2 films with high accuracy and speed. In this study, dual-comb spectroscopy (DCS) was applied to the measurement of Si/SiO2 multilayer samples to obtain interference spectra required for thickness evaluation. Using two phase-locked optical frequency combs, broadband spectra were acquired without mechanical scanning. Clear interference fringes, attributed to multiple reflections within the multilayer structure, were successfully observed in the obtained spectra. The analysis of the measured spectra and the potential application of DCS to thickness characterization of multilayer thin-film samples are presented.