Presentation Information
[8p-PA2-5]Analysis of terahertz double dielectric structure patch antenna with gallium nitrade by means of Finite Element Method
〇Soma Okada1, Goshima Keishiro1, Nagase Masanori2 (1.AIT, 2.AIST)
Keywords:
terahertz,GaN,patch antenna
In recent years, high speed wireless communication experiments using a GaAs resonance tunnel diode (RTD) THz oscillator and Schottky barrier diode (SBD) THz receiver using InP were reported.
The purpose of our research is to realize high performance THz device using nitride semiconductor (GaN), which have superior material properties such as wide band gap characteristics and epitaxial growth on Si substrate.
In this papar, we report analysis of terahertz patch antenna using gallium nitrade.
The purpose of our research is to realize high performance THz device using nitride semiconductor (GaN), which have superior material properties such as wide band gap characteristics and epitaxial growth on Si substrate.
In this papar, we report analysis of terahertz patch antenna using gallium nitrade.