Presentation Information
[8p-PA3-34]Performance evaluation of SWCNT p–n junction thermoelectric devices incorporating heterogeneous substrates
〇Hiroto Nakayama1, Masayuki Takashiri1,2 (1.Grad. Sch. Eng., Tokai Univ., 2.Tokai Univ., RIST)
Keywords:
SWCNT,thermoelectric devices,p-n junctions
With the advancement of CPS/IoT technologies, securing power sources for the enormous number of sensors required has become a critical challenge. Previous studies have proposed self-induced temperature-difference thermoelectric devices based on single-walled carbon nanotube (SWCNT) p–n junctions, demonstrating the potential to eliminate the need for externally applied temperature gradients. In this study, we aim to further enhance device performance by focusing on substrate materials—an aspect that has received little attention—and investigate the effectiveness of device structures incorporating substrates with distinct thermal properties.