Presentation Information
[8p-PB2-1]Control of GaAs Surface Chemical States by 172-nm Excimer-Light Irradiation and Its Impact on Au/GaAs Schottky Interface Properties
〇(M2)Haruto Monda1, Kazuki Ueda1, Takayuki Hasegawa1, Hideo Wada1, Masatoshi Koyama1, Akihiko Fujii1, Akihiro Shimizu2, Toshihiko Maemoto1 (1.Osaka Inst. of Tech., 2.Ushio Inc.)
Keywords:
GaAs,Excimer light,Schottky diode
The effect of irradiation atmosphere on the surface chemical states of GaAs modified by 172 nm excimer light was evaluated by X-ray photoelectron spectroscopy (XPS). Ga 3d analysis confirmed that HCl treatment removed the native oxide layer mainly composed of Ga oxides. After excimer irradiation, the GaOx component increased more significantly under N2 than under O2 atmosphere. As 3d spectra also showed the formation of AsOx components, suggesting the formation of a modified surface layer different from the native oxide. By correlating these surface chemical states with previously reported SBD characteristics and THz emission properties, new insights were obtained into the control of metal-semiconductor interfaces.