Presentation Information
[8p-PB2-12]Measurement of Irradiation Characteristics of a Fast Atom Beam Source for Batch Bonding
〇Tomohiro Takeya1, Kyosuke Oshima1, Yuki Miyoshi1, Taichi Hino1, Chiemi Oka1, Jyunpei Sakurai1, Seiichi Hata1 (1.Nagoya Univ)
Keywords:
Room-temperature direct bonding,Surface Activated Bonding,Fast Atom Beam (FAB) Source
The irradiation characteristics of two silicon wafers simultaneously irradiated by a fast atom beam (FAB) source were investigated toward batch wafer bonding.[C1] Based on an analysis of sputtering yield data reported in a previous study, an optimal irradiation angle of 50° was determined, and improved etching uniformity was confirmed through oxide removal experiments. In addition, the wafer arrangement conditions required for simultaneous irradiation were clarified, and irradiation experiments were conducted using a specially designed jig. The results revealed that the etching distribution was affected by the vacuum pressure distribution and redeposition. These findings provide fundamental data for the development of an FAB source capable of simultaneous irradiation of multiple wafers.