Presentation Information
[8p-PB2-15]Performance Evaluation of a Compact Bidirectional Magnetic-Field-Applied Fast Atom Beam Source with an Internal Electrode
〇Yuki Miyoshi1, Taichi Hino1, Kyosuke Oshima1, Chiemi Oka1, Junpei Sakurai2, Takahiro Yamadera3, Seiichi Hata1 (1.Nagoya Univ., 2.Sojo Univ., 3.NGK)
Keywords:
Room temperature bonding,Surface activated bonding,Fast atom beam source
Surface activated bonding using a fast atom beam (FAB) source is a room-temperature bonding technology expected to be applied to the three-dimensional integration of semiconductors. In previous studies, the application of a bidirectional magnetic field was proposed to extend the electrode lifetime, and the authors have developed a compact bidirectional magnetic-field-applied FAB source that can be integrated into a bonding apparatus. In this study, to improve the removal performance, an internal electrode was installed, and its operation under high voltage and its removal performance were evaluated. As a result, stable operation was achieved, and the fastest removal rate among compact bidirectional magnetic-field-applied FAB sources was obtained.