Presentation Information
[8p-PB2-16]Investigation of anode positions for 2-direction irradiation fast atom beam sources for surface activated bonding
〇Yuuta Ito1, Yuki MIyoshi1, Taichi Hino1, Kyosuke Oshima1, Chiemi Oka1, Seiichi Hata1 (1.Nagoya Univ.)
Keywords:
Room temperature direct bonding,Surface activated bonding,Fast atom beam
Surface activated bonding (SAB) joins dissimilar materials at room temperature by using a fast atom beam (FAB) to remove surface oxides and contaminants. The widely used saddle-field FAB source, however, processes only one wafer at a time, and particles generated by sputtering of its carbon cathode degrade bond quality. We propose a 2-direction irradiation FAB source that treats two wafers simultaneously in a single unit and is designed to suppress particle adhesion onto the wafer through bottom-side irradiation. Using plasma simulation (PIC-MCC and DSMC), we examined the anode position. Among the positions examined, the highest irradiation performance, evaluated by the total incident energy, was obtained at an anode distance of 25.5 mm. All 2-direction configurations gave a lower normalized flux ratio R than the conventional source, indicating a longer source lifetime, and enlarging the irradiation ports further raised the performance while reducing R to 0.41. (975 characters)