Presentation Information

[8p-S5-4]Mechanism of the quench-rate dependence of femtosecond-laser energy absorption in amorphous Si

〇Eiyu Gushiken1, Tomohito Otobe1,2, Arqum Hashmi1, Mizuki Tani1,2, Shunsuke Yamada2, Kenichi L. Ishikawa1 (1.UTokyo, 2.KPSI)

Keywords:

Ablation,Time-Dependent Density Functional Theory (TDDFT),Amorphous silicon

Amorphous silicon (a-Si) layers formed by femtosecond laser processing can influence the absorption of subsequent laser pulses. In this study, we performed first-principles calculations based on time-dependent density functional theory (TDDFT) for 512-atom a-Si models prepared with different cooling rates and investigated the relationship between structural distortion and optical energy absorption. The results show that the absorbed energy depends more strongly on network-scale structural features, such as bond-angle distortion, than on the concentration of coordination defects.