[9a-C309-1~13] 12.7 Biomedical Engineering and Biochips

12:15 PM - 12:30 PM JST(3:15 AM - 3:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9a-C309-13] Investigation of Iridium Oxide Formation Methods for Improving Response Stability of Dissolved Oxygen Image Sensors

〇(M1)Kanata Otani¹, Yuto Ishii¹, Hideo Doi¹, Tomoko Horio¹, Yoshiko Noda¹, Daisuke Akai¹, Takeshi Hizawa¹, Yong-Joon Choi¹, Kazuhiro Takahashi¹, Toshihiko Noda¹, Kazuaki Sawada¹ (1.Toyohashi Univ.)

Keywords:

dessolved oxygen sensor,CMOS sensor,Iridium oxide

In this study, we focused on stabilizing the response characteristics of a dissolved oxygen imaging sensor based on an oxide-semiconductor CMOS array sensor with an iridium oxide (IrO_x) sensing layer. By investigating the IrO_x formation conditions, we found that introducing an O₂ bubbling process in addition to conventional hydrogen peroxide oxidation effectively oxidized residual unoxidized Ir. As a result, the response variation during repeated measurements was suppressed to within ±5%, achieving stable dissolved oxygen sensing performance.