[9a-E208-1~5] 10.1 Emerging materials in spintronics and magnetics (including fabrication and characterization methodologies)

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9a-E208-4] Enhanced spin Hall conductivity at high temperature in TaSi₂
driven by Berry-phase monopoles

〇Ken Ishida¹, Takanori Shirokura², Nam Hai Pham³ (1.Univ. of Tokyo., 2.AIST, 3.Science Tokyo)

Keywords:

berry phase,spintronics

We demonstrate the concept of Berry phase monopole engineering of the spin Hall effect in non-centrosymmetric silicide TaSi2. The intrinsic spin Hall conductivity significantly increases at high temperatures, which can be attributed to the increasing contribution from the four degenerate points near the Fermi level via thermal excitation. Our results provide a strategy to enhance at high temperatures via Berry phase monopole engineering and pave the way for SOT spintronic devices working at high temperatures.