講演情報
[9a-E208-4]Enhanced spin Hall conductivity at high temperature in TaSi2
driven by Berry-phase monopoles
〇石田 乾1、白倉 孝典2、ファム ナムハイ3 (1.東大院工、2.産総研、3.東京科学大工)
キーワード：
ベリー位相、スピントロニクス
We demonstrate the concept of Berry phase monopole engineering of the spin Hall effect in non-centrosymmetric silicide TaSi2. The intrinsic spin Hall conductivity significantly increases at high temperatures, which can be attributed to the increasing contribution from the four degenerate points near the Fermi level via thermal excitation. Our results provide a strategy to enhance at high temperatures via Berry phase monopole engineering and pave the way for SOT spintronic devices working at high temperatures.