[9a-E217-1~11] 13.9 Compound solar cells

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9a-E217-1] Crystal growth control of InP films on MoO_x/Si substrates using perfect wetting molten In as a precursor

〇Taiyo Matsunaga¹, Usami Noritaka^1,2,3, Katsube Ryoji¹ (1.Nagoya Univ., 2.IMaSS Nagoya Univ., 3.InFuS Nagoya Univ.)

Keywords:

III-V semiconductors,wettability,crystal growth

We have previously demonstrated that perfect wetting of molten In can be achieved on MoO_x/Si substrates and that InP films can be formed using the wetted molten In as a precursor. In this presentation, we report the effects of heat-treatment conditions on the surface uniformity and crystal growth of InP films. The results suggest that differences in nucleation density caused by variations in phosphidation temperature strongly influence the crystal growth behavior. Based on these findings, we will discuss the optimization of growth conditions for the fabrication of high-quality InP films.