Presentation Information
[9a-E311-4]Evaluation of annealing behavior of color centers at SiO2/SiC interfaces via repeated same-area observations
〇(D)Kentaro Onishi1, Masahiro Hara1, Heiji Watanabe1, Takuma Kobayashi1 (1.UOsaka)
Keywords:
SiO2/SiC interface,single-photon emitters,quantum defects
