Presentation Information

10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9a-E311-6]Site-dependent characterization of photoionization cross-sections for silicon vacancies in 4H-SiC

〇(DC)Kazuki Okajima¹, Naoya Morioka^1,2, Tetsuri Nishikawa^1,2, Hiroshi Abe³, Koichi Murata⁴, Takeshi Ohshima^3,5, Hidekazu Tsuchida⁴, Norikazu Mizuochi^1,2,6 (1.Kyoto Univ., 2.CSRN Kyoto Univ., 3.QST, 4.CRIEPI, 5.Tohoku Univ., 6.QUP KEK)

Keywords:

silicon carbide,silicon vacancy,PDMR

Silicon vacancies (V1 and V2) in 4H-SiC are promising candidates for quantum device applications. However, their charge dynamics have remained elusive. In this study, we evaluated the photoionization characteristics of single V1 and V2 using photocurrent spectroscopy. In this presentation, we will report the excitation wavelength dependence of their respective ionization cross-sections and provide guidelines for selecting the optimal excitation wavelength to enhance the sensitivity of photocurrent detected magnetic resonance (PDMR).

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