[9a-E311-1~8] KS.1 Solid State Quantum Sensor Group

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9a-E311-7] Implementation & evaluation of all-optical thermal imaging using silicon vacancy in SiC

〇Hidenori Hiraishi¹, Kazuya Harii², Takeshi Ohshima^2,3, Makoto Kohda^2,3,4, Yasuto Hijikata¹ (1.Saitama Univ., 2.QST, 3.Tohoku Univ., 4.Washington Univ.)

Keywords:

silicon carbide,quantum sensor

Solid-state quantum sensors using silicon vacancy defects in SiC are expected as a technology that overcomes the diffraction limit constraint faced by conventional thermography based on infrared detection, and realizes temperature measurement at the sub-micrometer scale. In this study, we constructed a non-invasive imaging system that determines temperature by analyzing the fluorescence peak originating from the excited-state level anti-crossing in silicon vacancy defects from fluorescence images acquired with a CMOS camera.