[9a-F211-1~12] 18.2 Process Informatics

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9a-F211-5] Simulations with Temperature Conditions for Understanding Sintering Mechanisms

〇Nao Matsuya¹, Yoko Kasai¹, Syuzo Tsuchida¹, Taichi Nakamura¹ (1.Panasonic Holdings Co.)

Keywords:

dielectric,sintering,simulation

As electronic components increasingly demand higher reliability, understanding the sintering process remains a critical challenge. This study focuses on the mesoscale and proposes a sintering simulation that integrates three factors - grain growth, pore migration, and pore annihilation - modeled with temperature dependence, achieving consistency with both physical principles and experimental data. Analysis of SrTiO3 shows a temperature-driven transition in dominant mechanisms from surface diffusion to volume diffusion, consistent with experimental observations. The model reproduces relative density within +/-3.7%, contributing to improved understanding of sintering behavior and more efficient materials development.