Presentation Information
[9a-F211-7]Layer-selective and asymmetric reorganization of electrostatic-potential topology in aggressively scaled transistors
〇Hirokazu Fukidome1, Haruto Nakamura1, Daiki Tataka1, Kento Shiga1, Uran Yamamoto1, Qiyue He1, Yotaro Machida2, Ryunosuke Nagaoka2, Issei Watanabe3, Masato Kotsugi2 (1.RIEC, Tohou Univ., 2.Tokyo Univ. Science, 3.NICT)
Keywords:
Persistent homology,device scaling,high electron mobility transistor
InGaAs-based high-electron-mobility transistors are one of the key devices for next-generation wireless communications. We analyzed the electrostatic potential distribution in an InGaAs HEMT using persistent homology. The results revealed that aggressive scaling induces layer-selective and source–drain-asymmetric reorganization of the electrostatic-potential topology in the cap and channel layers, and that this reorganization strongly affects the device characteristics. This finding was obtained for the first time using a topological machine-learning approach.