[9a-N101-1~11] 15.4 III-V-group nitride crystals

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9a-N101-8] Time-Resolved Emission Response Evaluation of Deep-Ultraviolet Laser Diodes
for High-Speed Optical Wireless Communications

〇Shota Hirayama¹, Akira Yoshikawa², Ziyi Zhang², Yuki Yoshida³, Shuhei Ichikawa^1,4, Kazunobu Kojima¹ (1.Grad. Sch. Eng.,The Univ. of Osaka, 2.ULTEC Inc., 3.National Institute of Information and Communication Technology, 4.Research Center for UHVEM)

Keywords:

deep-ultraviolet laser diode,optical wireless communication,time-resolved emission response

In this study, the time-resolved emission response of a deep-ultraviolet laser diode (DUV-LD) under RF pulse modulation was measured using a streak camera to evaluate its basic characteristics as a high-speed modulation light source. The optical intensity waveforms were compared under different DC bias currents, and the rise of the optical intensity after RF pulse injection was found to become steeper as the DC bias current increased. These results indicate the importance of bias conditions for high-speed modulation operation.