[9a-N101-1~11] 15.4 III-V-group nitride crystals | The 87th JSAP Autumn Meeting 2026

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Oral presentation15 Crystal Engineering : 15.4 III-V-group nitride crystals

[9a-N101-1~11]15.4 III-V-group nitride crystals

Wed. Sep 9, 2026 9:00 AM - 12:00 PM JST
Wed. Sep 9, 2026 12:00 AM - 3:00 AM UTC

N101 (First Year Education Bld. N Block)

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9a-N101-1]Interfacial Reaction Analysis of Ohmic Contacts on N- and III-Polar n-Al_0.62Ga_0.38N

〇Ryota Watanabe¹, Takumu Saito¹, Rintaro Miyake¹, Naoki Kitta¹, Seiya Kato¹, Yuma Miyamoto¹, Shion Kamiya¹, Rintaro Kobayashi¹, Tomoya Tanikawa¹, Kenta Kitagawa¹, Sho Iwayama¹, Yasuo Koide¹, Hideto Miyake², Keigo Nagao³, Taiji Yamamoto³, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Motoaki Iwaya¹ (1.Meijo Univ., 2.Mie Univ., 3.Rigaku)

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9a-N101-2]Investigation of Contact Property Improvement by Laser Annealing of N-Polar n-AlGaN for Vertical UV-B Laser Diodes

〇Yuma Miyamoto¹, Takumu Saito¹, Rintaro Miyake¹, Ryota Watanabe¹, Kenta Kitagawa¹, Sho Iwayama¹, Hideto Miyake², Yoshito Jin³, Masamitsu Toramaru³, Tatsuya Matsumoto³, Yoshihiro Shimazaki³, Yuzuka Minami³, Hironori Torii³, Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹ (1.Meijo Univ., 2.Mie Univ., 3.JSW.)

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9a-N101-3]Evaluation of electrical characteristics of AlGaN-based UV-B LDs with p-Al_0.45Ga_0.55N contact layer

〇(M1)Kenta Kitagawa¹, Takumu Saito¹, Rintaro Miyake¹, Naoki Kitta¹, Seiya Kato¹, Ryota Watanabe¹, Yuma Miyamoto¹, Shion Kamiya¹, Tomoya Tanikawa¹, Rintaro Kobayashi¹, Sho Iwayama¹, Yasuo Koide¹, Hideto Miyake², Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Motoaki Iwaya¹ (1.Meijo Univ., 2.Mie Univ.)

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[9a-N101-4]Structural design and lasing operation of AlGaN-based UV-B LDs employing a p-AlGaN contact layer

〇Takumu Saito¹, Rintaro Miyake¹, Seiya Kato¹, Naoki Kitta¹, Ryota Watanabe¹, Yuma Miyamoto¹, Shion Kamiya¹, Tomoya Tanikawa¹, Rintaro Kobayashi¹, Kenta Kitagawa¹, Sho Iwayama¹, Masaru Kuramoto¹, Hideto Miyake², Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹ (1.Meijo Univ., 2.Mie Univ.)

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[9a-N101-5]Device Characteristics of AlGaN-Based UV-B Laser Diodes Employing a p-AlGaN Contact Structure

10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9a-N101-6]Analysis of Factors Limiting Long-Wavelength Operation of AlGaN-based UV-A/B Laser Diodes

〇Tomoya Tanikawa¹, Takumu Saito¹, Rintaro Miyake¹, Seiya Kato¹, Naoki Kitta¹, Ryota Watanabe², Shion Kamiya¹, Yuma Miyamoto¹, Rintaro Kobayashi¹, Kenta Kitagawa¹, Sho Iwayama¹, Hideto Miyake², Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹ (1.Meijo Univ., 2.Mie Univ.)

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[9a-N101-7]Impact of n-type AlN/AlGaN superlattice cladding layer thickness on AlGaN LD characteristics

〇Kazuaki Ebata¹, Kazuyuki Hirama¹, Yoshitaka Taniyasu¹ (1.NTT BRL)

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9a-N101-8]Time-Resolved Emission Response Evaluation of Deep-Ultraviolet Laser Diodes
for High-Speed Optical Wireless Communications

〇Shota Hirayama¹, Akira Yoshikawa², Ziyi Zhang², Yuki Yoshida³, Shuhei Ichikawa^1,4, Kazunobu Kojima¹ (1.Grad. Sch. Eng.,The Univ. of Osaka, 2.ULTEC Inc., 3.National Institute of Information and Communication Technology, 4.Research Center for UHVEM)

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[9a-N101-9]Optimization of EBL for high-efficiency 265 nm band AlGaN UVC-LEDs

〇Arata Sasaki^1,2, Kazuki Nonaka^1,2, Yukio Kashima¹, Eriko Matsuura¹, Sachie Fujikawa^2,1, Hiroyuki Yaguchi², Hideki Hirayama¹ (1.RIKEN, 2.Saitama Univ.)

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)English Presentation

[9a-N101-10]Demonstration of top-emitting in AlGaN-based deep-ultraviolet light-emitting diodes with high wall-plug efficiency

〇Guodong Hao¹, Manabu Taniguchi¹, Linjie Wei¹, Shin-ichiro Inoue¹ (1.NICT)

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[9a-N101-11]Highly-collimated AlN-substrate deep-ultraviolet LEDs for low-bit-error-rate optical wireless communication

〇LINGJIE WEI¹, Guo-Dong Hao¹, Manabu Taniguchi¹, Shin-ichiro Inoue¹ (1.NICT)

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