Presentation Information
[9a-PA1-27]Nano-gap Swithching Effect of AuPd Alloy Nano-gap Electrodes in High-Temperature Environments
〇Koki Sugimoto1, Akira Takatsuki1, kazuhito Tsukagoshi3, Yasuhisa Naitoh2, Hiroshi Suga1 (1.Chiba Tech, 2.AIST, 3.NIMS)
Keywords:
Nano gap,Non-volatile memory,High-temperature environment
Nano-gap electrodes are expected to serve as non-volatile memory devices capable of operating at high temperatures. In this study, we fabricated Au, Pd, and Au-Pd mixed electrodes and evaluated their electrical characteristics under high-temperature conditions. The results confirmed resistive switching behavior up to 200 °C for the Au electrode and up to 500 °C for the Pd electrode. In contrast, operation was confirmed even at 600 °C for the Au:Pd = 3:7 mixed electrode, demonstrating that mixing Au and Pd improves high-temperature performance.