Presentation Information
[9a-PA1-28]Enhancement of Electron Mobility in C70 Fullerene Nanosheet Transistors Using a Top-Contact Structure
〇Hayato Abe1,2, Yukiya Umeta1, Hiroshi Suga1, Takatsugu Wakahara2, Kazuhito Tsukagoshi2 (1.Chiba Tech, 2.NIMS)
Keywords:
organic transistor,fullerene,fullerene nanosheet
In this study, we fabricated a top-contact field-effect transistor (FET) based on C70 fullerene nanosheets (C70NS) and evaluated its charge-transport characteristics. The C70NS was annealed in vacuum at 200 deg C for 100 h, followed by the deposition of Au source and drain electrodes. The transfer characteristics demonstrated n-type operation. The electron mobility extracted using the Y-function method was approximately two orders of magnitude higher than that previously reported for bottom-contact devices. This enhancement is considered to result from improved contact at the electrode/C70NS interface and enhanced charge-transport properties of the C70NS induced by vacuum annealing.