[9a-PA2-1~9] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[9a-PA2-6] Hole Transport through Stacking Faults and the Mechanism of Inversion Layer Formation in 3C-SiC/4H-SiC Heterostructures

〇Kota Gejo¹, Tetsuo Hatakeyama¹, Masao Sakuraba², Hiroyuki Nagasawa^2,3 (1.Toyama Pref. Uni., 2.RIEC, Tohoku Univ., 3.CUSIC Inc.)

Keywords:

3C-SiC,Inversion Layer

In MOS structures based on 3C-SiC/4H-SiC heterostructures, inversion characteristics have recently been observed, unlike in conventional SiC MOS structures where deep depletion is dominant. In this study, the mechanism of inversion layer formation was investigated using TCAD simulations, focusing on stacking-fault (SF) 4H-SiC layers embedded in 3C-SiC. The results indicate that the SF layer can act as a hole transport path, facilitating hole supply to the MOS interface and thereby contributing to inversion layer formation.