[9a-PB4-1~27] 12.4 Organic light-emitting devices, organic transistors, and flexible devices

[9a-PB4-6] ESR Study of Electric Double-Layer Transistors Based on the n-Type Small-Molecule Organic Semiconductor PhC₂-BQQDI-C₅

〇Rei Kawakubo¹, Sayo Okabe¹, Taiki Sakaguchi¹, Wakaba Somiya¹, Wenhao He¹, Tsubasa Okamoto^1,2, Yukihiro Shimoi^1,2, Shohei Kumagai³, Toshihiro Okamoto³, Pushi Wang⁴, Ryohei Kameyama⁴, Jun Takeya⁴, Kazuhiro Marumoto^1,2,5 (1.Dep. of Mater. Sci., Univ. of Tsukuba, 2.OIQSST, Univ. of Tsukuba, 3.Science Tokyo, 4.The Univ. of Tokyo, 5.TREMS, Univ. of Tsukuba)

Keywords:

organic semiconductor,ESR,Electric Double Layer Transistors

Organic semiconductors have attracted attention as materials for large-area, flexible devices. However, electron-transporting (n-type) organic semiconductors exhibit lower performance—including stability and mobility—than hole-transporting (p-type) ones, and further material development is desired. In recent years, low-molecular-weight materials with a BQQDI backbone have been reported as high-performance n-type organic semiconductors. In this study, PhC2–BQQDI–C5, which features asymmetric side chains and improved solution processability, was deposited using a continuous edge-casting method, and ESR studies of the charge states in the resulting electric double-layer transistors (EDLT) were conducted.