[9p-A13-1~12] CS.4 Code-sharing session of 3.10 &3.12

5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)

[9p-A13-12] Temperature Characteristics of a Nanocavity-based Raman Silicon Laser

〇Shoei Yamasaki^1,2, Wataru Takahama^1,2, Ayumi Ishihara^1,2, Rikuto Ichinose^1,2, Okano Makoto³, Yasushi Takahashi^1,2 (1.Osaka Met. Univ., 2.Okayama Univ., 3.AIST)

Keywords:

Raman silicon laser,silicon photonics,photonic crystal

The temperature characteristics of a Raman silicon laser based on a high-Q nanocavity were evaluated over a wide temperature range from −80°C to +50°C. A fiber-coupled laser module was measured in a large vacuum chamber, and laser oscillation was confirmed at all measured temperatures. As the temperature decreased, suppression of output saturation and enhancement of laser output were observed, and the maximum output at low temperature was approximately five times higher than that at high temperature. This performance improvement is attributed to the reduction of two-photon absorption and free-carrier absorption in silicon.