[9p-A22-1~12] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[9p-A22-11] Forward and inverse analysis of 2D semiconductor devices using PINNs

〇SATOFUMI SOUMA¹, Akiko Ueda² (1.Kobe Univ., 2.AIST)

Keywords:

Device Simulation,Physics Informed Neural Networks