The 87th JSAP Autumn Meeting 2026
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Session Details

Oral presentation13 Semiconductors : 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[9p-A22-1~12]13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Wed. Sep 9, 2026 2:00 PM - 5:15 PM JST
Wed. Sep 9, 2026 5:00 AM - 8:15 AM UTC
A22 (Faculty of Info. Sci. & Tech. Bldg.)
2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-A22-1]Spatial resolution demonstration for Si-based stacked film analysis by IR near-field light

〇(D)Ryoga Odawara1, Yasuo Shimizu2, Koichiro Saga2, Yukio Kawano1,3,4 (1.Chuo Univ., 2.Sony Semiconductor Solutions Corporation, 3.NII, 4.KISTEC)
2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[9p-A22-2]Development of a Thermometer Based on Weak Localization and Measurement of the Thermal Conductivity of SiO2 at Cryogenic Temperatures

〇(M2)Kazuki Watanabe1, Michimasa Morita1, Keito Yoshinaga1, Ryo Toyoshima1, Ken Uchida1 (1.Univ. of Tokyo)
2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[9p-A22-3]Water structure at SiO2/solution interface and the effect of Ca2+ adsorption

〇Satoshi Nihonyanagi1,2, Woongmo Sung2, Tahei Tahara2, Preeti Gahtori3, Juli Gibbs3 (1.Univ. of Tsukuba, 2.RIKEN, 3.Univ. of Alberta)
2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-A22-4]Elucidation of Ag adsorption mechanism for silver nanowire formation on Si(111) surfaces using first-principles calculations

〇Hana Kyoda1, As Zahrah Fitriana Syafira1, Kenta Arima1, Kouji Inagaki1 (1.UOsaka)
3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[9p-A22-5]Formation of staircase structures on ultrathin Si layer/SiO2 structure by wet etching

〇(M2)Mizuma Uno1, Ryuto Hashimoto1, Kouji Inagaki1, Kenta Arima1 (1.UOsaka)
3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)English Presentation

[9p-A22-6]Investigation of Schottky-Barrier MFSFETs with ferroelectric HfN thin film

〇KANGBAI LI1, HAORAN YAN1, HAOLIN WANG1, SHUN ICHIRO OHMI1 (1.Science Tokyo)
3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[9p-A22-7]Vov-Induced Transition Between Long- and Short-Channel Operation in IDsat

〇Naoyuki Shigyo1, Miura Oki1 (1.Kumamoto University)
4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[9p-A22-8]Monte Carlo Simulation of Electron Transport in MOSFETs under Impurity-Induced Random Potentials

〇Kaoru Kato1, Hajime Tanaka1,2, Nobuya Mori1 (1.UOsaka, 2.Kwansei Gakuin Univ.)
4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[9p-A22-9]Numerical Study of the Roughness-Limited Mean Free Path in Multimode Semiconductor Nanosheets

〇Yuta Yamada1, Nobuya Mori1 (1.UOsaka)
4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[9p-A22-10]Influence of Off-Diagonal Effective Mass on Two-Dimensional Electron Mobility

〇Nobuya Mori1, Hajime Taanka1,2 (1.UOsaka, 2.Kwansei Gakuin Univ.)
4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[9p-A22-11]Forward and inverse analysis of 2D semiconductor devices using PINNs

〇SATOFUMI SOUMA1, Akiko Ueda2 (1.Kobe Univ., 2.AIST)
5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)

[9p-A22-12]Simulation of Single Event Transient in Nanosheet-Based FETs

〇(M1)Vanness Filbert Cierra1, Yoshinari Kamakura1 (1.Osaka Inst. Tech.)
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