Presentation Information
[9p-C214-2]Development of reconfigurable artificial synapses based on an antiambipolar transistor
〇Nao Kobayashi1,2, Yuho Yamamoto1,3, Yoichi Yamada3, Kaname Kanai2, Ryoma Hayakawa1, Yutaka Wakayama1 (1.NIMS, 2.Tokyo Univ. of Sci, 3.Tsukuba Univ.)
Keywords:
Anti-ambipolar transistor,Reconfigurable artificial synapses,Floating gate
In this study, we demonstrated reconfigurable synaptic operations utilizing a floating-gate-type anti-ambipolar transistor (FG-AAT), where excitatory and inhibitory synaptic operations were switched by applying unipolar gate voltage (VG) pulses. The AAT features a PN junction in its channel layer, exhibiting a Λ-shaped transfer curve. The drain current (ID) transits from an increase to a decrease with increasing VG. Next, the Λ-shaped transfer curve was largely shifted depending on the charges trapped in FG, enabling the transition from the increase to decrease in ID at the same VG. Consequently, we realized reconfigurable synaptic operations. The excitatory and inhibitory operations were electrically reconfigured by controlling the trapped charges in FG under the same unipolar gate voltage pulses. This behavior closely resembles that of biological synapses, highlighting the potential to attain more brain-like computing.
