Presentation Information
[9p-C214-4]Microscopic Elucidation of anti-/syn-Isomer Dependent Charge Transport Mechanism in Organic Semiconductors by Low-Temperature Operando ESR Measurements
〇(D)Wakaba Somiya1, Wenhao He1, Yukihiro Shimoi1,2, Kazuhiro Marumoto1,2,3 (1.Dep. of Mater. Sci., Univ. of Tsukuba, 2.OIQSST, Univ. of Tsukuba, 3.TREMS, Univ. of Tsukuba)
Keywords:
Organic semiconductor,Electron Spin Resonance
Organic semiconductors offer tunable properties through molecular design using organic synthesis. DMADT exists in anti- and syn-isomers with distinct transport characteristics in previous study. X-ray and physicochemical measurements cannot identify the factors of the different charge transport characteristics. This study, we apply operando electron spin resonance (ESR) method to DMADT-based organic transistors to probe charge behavior at microscopic level and clarify isomer-dependent transport mechanisms.
