Presentation Information

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-C309-3]Growth and Evaluation of High-Quality Halide Perovskite CsSnI₃ Thin Films

〇(M1)Kosuke Fujii¹, Takuya Takashiro¹, Tsutomu Nojima², Masao Nakamura¹ (1.Tohoku Univ., 2.IMR, Tohoku Univ.)

Keywords:

Perovskite,Epitaxial thin film

Lead free halide Perovskite CsSnI₃ is gaining attention for materials as a next-generation solar cell because of high conversion efficiency, defect tolerance, and high carrier mobility. Recently, the possibility of Dirac-like electronic state is suggested, and new quantum transport phenomena are expected. In this study, we fabricated high quality CsSnI₃ thin film by MBE (molecular beam epitaxy) method and investigated the electric structure by optical absorption spectroscopy measurement.

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Presentation Information

[9p-C309-3]Growth and Evaluation of High-Quality Halide Perovskite CsSnI3 Thin Films

Keywords:

[9p-C309-3]Growth and Evaluation of High-Quality Halide Perovskite CsSnI₃ Thin Films