[9p-C310-1~15] 6.4 Thin films and New materials

5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)

[9p-C310-12] Influence of ZnMgO Thin Film Thickness on the Piezophototronic Effect

〇Kosuke Nomura¹, Saiki Kitagawa¹, Taizo Kobayashi¹ (1.Graduate School of Science and Engineering)

Keywords:

piezophototronic effect,photovoltaic device,flexible device

This study investigates the influence of ZnMgO thin-film thickness on the piezoelectric properties and the piezo-phototronic effect in ZnMgO/Se Photovoltaic devices. ZnMgO thin films with thicknesses of 70, 300, and 500 nm were fabricated by RF magnetron sputtering using a Zn_0.9Mg_0.1O target. Their crystallinity was evaluated by X-ray diffraction (XRD). Subsequently, flexible photovoltaic devices with an structure of ITO/ZnMgO/Se/MoO₃/Au were fabricated on PET substrates, where ITO, Se, and MoO₃ served as the transparent electrode, light-absorbing layer, and hole-transport layer, respectively. The power conversion efficiency of the fabricated devices was measured while controlling the bending radius using a bending tester. The aim of this study is to determine the optimal ZnMgO film thickness conditions for realizing a high-sensitivity flexible strain sensor by clarifying the relationship between film thickness and the piezo-phototronic effect.