[9p-C310-1~15] 6.4 Thin films and New materials

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[9p-C310-3] Influence of TiO2 thin film sputtering conditions on the characteristics of selenium photovoltaic devices

〇Hokuto Nakano¹, Saiki Kitagawa¹, Zacharie Jehl Li-Kao², Taizo Kobayashi¹ (1.Graduate School of Science and Engineering, Ritsumeikan Univ., 2.Polytechnic Univ of Catalonia)

Keywords:

selenium photovoltaic device,sputtering,titanium oxide

Our laboratory is working on improving the efficiency of selenium photovoltaic devices. In this study, we aimed to change various physical properties such as the crystal structure and band gap of the TiO₂ thin films by adjusting the Ar/O₂ ratio during sputtering deposition, and investigated the effect of sputtering conditions for the TiO₂ thin films on the characteristics of selenium photovoltaic devices. We found that the optical band gap changes as shown by the Tauc plot. We fabricated devices using the TiO₂ thin films with the applied deposition conditions as electron transport layers, and evaluated and compared their power conversion efficiencies.