Presentation Information
[9p-E217-6]Substrate temperature dependence in CdZnS buffer layers by open-air CVD
〇Tamotsu Okamoto1, Takumi Shimada1, Yuji Kurimoto1, Ayaka Kanai2, Kunihiko Tanaka2 (1.NIT, Kisarazu Coll., 2.Nagaoka Univ. Tech.)
Keywords:
buffer layer,CdZnS,open-air CVD
In this study, we attempted the deposition of CdZnS films by open-air CVD at temperatures exceeding 500℃ and investigated the effects of substrate temperature. CdZnS films were prepared on quartz substrates at the substrate temperature of 430-530℃. According to the relationship between PL peak intensity and substrate temperature for various composition ratios, strong PL emission was observed at 430℃ for CdS film, but the PL intensity decreased sharply as the substrate temperature increased above 450℃. On the other hand, for ZnS films, PL emission was observed even at high temperatures of 530℃. In CdZnS films, the PL intensity above 450℃ increased compared to that in CdS film. These results suggest that the optimal substrate temperature varies depending on the CdS source ratio.