[9p-E217-1~9] 13.9 Compound solar cells

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[9p-E217-7] Development of BaZrS₃ Thin-film Formation Technology via Mist CVD for Solar Cells

〇(M2)KOSEI YOKOSAWA¹, Yoshinori Kimoto², Takuya Kato², Takahito Nishimura¹ (1.Science Tokyo, 2.Idemitsu Kosan Co., Ltd)

Keywords:

semiconductor,BaZrS3,Mist-CVD

The chalcogenide perovskite BaZrS3 is a promising material for top cells in thin-film tandem solar cells due to its high light absorption coefficient and wide bandgap. In this study, we focused on the mist CVD method and investigated a thin-film deposition technique at a lower temperature of approximately 500°C compared to conventional methods. We discuss in detail the effects of key mist CVD conditions, such as carrier gas flow rate and the Ba/Zr ratio in the feed solution, on various physical properties of BaZrS3 thin films.