Presentation Information
[9p-E218-10][The 60th Young Scientist Presentation Award Speech] Operating temperature characteristics of an electric-field-driven circular polarity modulator using dilute nitride semiconductors
〇Hiroto Kise1, Keisuke Minehisa2, Junichi Takayama1, Akihiro Murayama1, Fumitaro Ishikawa2, Satoshi Hiura1 (1.IST, Hokkaido Univ., 2.RCIQE, Hokkaido Univ.)
Keywords:
Circular polarization,Electric field,Dilute nitride semiconductor
To establish new information and communication technologies utilizing circular polarization, the development of a high-speed circular polarity modulator capable of arbitrary modulation of light helicity is required. We previously reported that we fabricated a sample containing two types of circularly polarized luminescent layers, in which dilute nitride GaNAs and GaInNAs quantum wells are designed as left- and right-handed circularly polarized luminescent layers, respectively, and achieved a modulation of circular polarity at room temperature using only an electric field. In this presentation, as a further study, we report the results of our investigation into the operating temperature characteristics of the device.