[9p-E218-1~16] 13.8 Optical properties and light-emitting devices

5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-E218-14] Tunable modulation of red luminescent properties of Eu-doped GaN
under externally induced uniaxial strains

〇Yuya Hinokuchi¹, Hodaka Kubo¹, Keito Mori-Tamamura¹, Yasufumi Fujiwara², Kazunobu Kojima¹, Shuhei Ichikawa^1,3 (1.Grad. Sch. Eng., The Univ. of Osaka, 2.ROST, Ritsumeikan Univ., 3.Research Center for UHVEM, The Univ. of Osaka)

Keywords:

Rare earth-doped semiconductor,Eu-doped GaN,strain engineering

Eu-doped GaN (GaN:Eu)-based red light-emitting diodes (LEDs) have attracted significant attention for achieving wide-color-gamut RGB micro-LEDs within the same material system on a single substrate. To further enhance the luminance of these red LEDs, strain engineering of GaN:Eu is crucial due to the different emission efficiencies among individual luminescent centers. In this study, we evaluated the changes in the red luminescence characteristics of Eu by applying external uniaxial strain along the m-axis to a GaN:Eu thin film grown on a (0001) sapphire substrate.