[9p-E218-1~16] 13.8 Optical properties and light-emitting devices

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[9p-E218-8] Investigation of Defect Levels Induced by a Molecular Ion Implantation in Si substrate by a Photoluminescence Method

〇Naoki Fujita¹, Shun Sasaki², Takeshi Kadono², Kazunari Kurita^2,3, Atsuhiko Fukuyama¹ (1.Univ. of Miyazaki, 2.SUMCO Corporation, 3.Kyushu Univ.)

Keywords:

Radiative Recombination,Photoluminescence Method,Molecular Ion Implantation