[9p-F212-1~16] KS.2 Quantum Information Engineering Group

5:45 PM - 6:00 PM JST(8:45 AM - 9:00 AM UTC)

[9p-F212-16] Observation of Silicon G Centers by Resonant Excitation for Quantum Transducers

〇Akira Kamimaki^1,2, Yuma Honda³, Rikuma Gonda³, Taichi Fujwara³, Daisuke Ito³, Yuhei Sekiguchi^1,2,3, Kouta Takenaka^1,2,4, Shinobu Onoda^1,2,4, Hideo Kosaka^1,2,3 (1.IAS, Yokohama Nalt. Univ., 2.QIC, Yokohama Nalt. Univ., 3.Dept. of Phys, , Yokohama Nalt. Univ., 4.QST)

Keywords:

Quantum transducer,Color center,Silicon G center

Color centers on silicon-on-insulator (SOI) substrates, which offer telecom-band emission and high integrability, have attracted attention for quantum transducers. Here, we report observation of silicon G centers (G* centers) formed on SOI substrates by resonant excitation, which exhibit O-band emission and a short radiative lifetime. We will discuss their fabrication procedures and optical properties.