Presentation Information
[9p-F212-3]Evaluation of Hole Spin Relaxation Time in Pauli Spin Blockade
Using RF Reflectometry in a Planar MOS Silicon Double Quantum Dot
〇(M1)Takeru Sakai1, Sayyid Irsyadul Ibad1, Kenta Ebisawa1, Yusuke Sato1, Itaru Yanagi2, Mine Toshiyuki2, Ryuta Tsuchiya2, Digh Hisamoto2, Hiroyuki Mizuno2, Shunsuke Ota1, Tetsuo Kodera1 (1.Science Tokyo, 2.R&D Group, Hitachi, Ltd.)
Keywords:
quantum dot,silicon
The strong spin-orbit interaction of hole spins is known to cause a relatively short spin relaxation time in the Pauli spin blockade (PSB) regime, and extending the spin relaxation time in the PSB regime is a challenge for high-fidelity spin readout.
In this study, we measured the dependence of the PSB relaxation time on inter-dot tunnel coupling using planar p-type silicon quantum dots fabricated by an industrial 300 mm CMOS process.
In this study, we measured the dependence of the PSB relaxation time on inter-dot tunnel coupling using planar p-type silicon quantum dots fabricated by an industrial 300 mm CMOS process.