[9p-PA1-1~52] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[9p-PA1-21] Temperature Dependence of PL Lifetime in Near-band-edge Emission of Rocksalt Structured MgZnO

〇Satoshi Igarashi¹, Ryosuke Nemoto¹, Kyosuke Tanaka¹, Tomohiro Yamaguchi¹, Tohru Honda¹, Takeyoshi Onuma¹ (1.Kogakuin Univ.)

Keywords:

Rocksalt structured-MgZnO,Photo luminescence,Time-resolved Photo luminescence

To clarify the effect of isoelectron traps on the luminescence of rock salt structure magnesium zinc oxide (RS-Mg_xZn_1-xO), temperature-dependent photoluminescence (PL) and time-resolved PL (TRPL) measurements were performed near the band edge (NBE). PL measurements showed a low-energy shift and thermal quenching with increasing temperature. TRPL measurements showed a long radiative recombination lifetime due to isoelectron traps at low temperatures, and a short non-radiative recombination lifetime due to thermal activation of non-radiative recombination centers (NRC) at room temperature.