The 87th JSAP Autumn Meeting 2026
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Poster presentation21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" : 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[9p-PA1-1~52]21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Wed. Sep 9, 2026 2:00 PM - 3:30 PM JST
Wed. Sep 9, 2026 5:00 AM - 6:30 AM UTC
PA1 (1st Gymnasium)

[9p-PA1-1]Investigation of layer-structure-dependent property in NixZn1-xO compound deposited by Electrostatic Spray Deposition (ESD)

〇Kanata Tanaka1, Mutsumi Sugiyama1,2 (1.Tokyo Univ. Sci., 2.RIST)
English Presentation

[9p-PA1-2]Effects of Thermal Pressing Temperature on Electrical Conduction in Undoped and Nitrogen-Doped ZnO Nanoparticle Layers

〇(D)Shrestha Dey Monty1, Toshiyuki Yoshida1, Yasuhisa Fujita1,2 (1.Shimane University, 2.S-Nanotech Co-Creation Co., Ltd.)

[9p-PA1-3]Novel “Electrostatic Spray Deposition (ESD)” method to employ NiO thin films growth

〇Fysol Ibna1,2,3, Mutsumi Sugiyama1 (1.Department of Electrical Engineering, Tokyo University of Science, Faculty of Science & Technology, 2641 Yamazaki, Noda, Chiba, 278-8510, Japan, 2.Department of Electrical and Electronic Engineering, City University, Khagan, Birulia, Savar, Dhaka, 1340, Bangladesh, 3.Faculty of Science and Engineering, City University, Khagan, Birulia, Savar, Dhaka, 1340, Bangladesh)

[9p-PA1-4]Deep-UV detection characteristics of polycrystalline β-Ga2O3 thin films deposited on glass substrates

〇Takuto Miwa1, Shingo Tojo1, Katsushi Nishino1 (1.Tokushima Univ.)

[9p-PA1-5]Control of nanoparticle dispersion in source solutions for mist CVD of nanoparticle-dispersed semiconductor thin films

〇Rio Tanigawa1, Hiroto Ujiie1, Hina Saito1, Tetsuya Kouno1, Hiroko Kominami1, Kazuhiko Hara1,2,3 (1.GSIST, Shizuoka Univ., 2.CMMP, Shizuoka Univ., 3.RIE, Shizuoka Univ.)

[9p-PA1-6]Effect of HCl on Growth of Sn-doped α-Ga2O3 by Mist CVD Method

〇Nishio Soma1, Iida Ryuma1, Ishikawa Haruki1, Nakahachi Hinata1, Terukina Asato1, Ota Chisato1, Aikawa Shinya1, Nagai Hiroki1, Onuma Takeyoshi1, Honda Tohru1, Yamaguchi Tomohiro1 (1.Kogakuin Univ.)

[9p-PA1-7]Growth of SnOx Thin Films by Mist CVD Using a Formic Acid-Containing Precursor Solution

〇Shunsuke Tamura1, Taro Iizuka1, Haruki Ishikawa1, Shinya Aikawa1, Hiroki Nagai1, Takeyoshi Onuma1, Tohru Honda1, Tomohiro Yamaguchi1 (1.Kogakuin Univ.)

[9p-PA1-8]Characterization of SnO Thin Films Grown on Si Substrates with Different Crystallographic Orientations

〇Yoshikazu Shin1, Ryusei Ikeda1, Aikawa Shinya1 (1.Kougakuin Univ.)

[9p-PA1-9]Effect of acetic acid addition on mist CVD of (Zn,Mg)O and Ga2O3 films

〇Hiroto Ujiie1, Hina Saito1, Rio Tanigawa1, Tetsuya Kouno1, Hiroko Kominami1, Kazuhiko Hara1,2,3 (1.Shizuoka Univ., 2.Medical Photonics., 3.Elec.Res.Inst.)

[9p-PA1-10]Raman Spectroscopic Study of α-Ga2O3 Thick Films Grown on Sapphire Substrates by Mist CVD

〇(M2)Kotaro Etokoro1, Sota Otsuji1, Atsunobu Masuno1, Kentaro Kaneko2, Katsuhisa Tanaka1 (1.Kyoto Univ., 2.Ritsumeikan Univ.)

[9p-PA1-11]In-situ Diagnosis of Early-stage Growth Dynamics during Mist-CVD Growth of Amorphous TiOx on Au and Cu Substrates Uisng Quartz Crystal Microbalance

〇Hajime Shirai1, Fumiya Kobayashi2, Hideki Kurihara3, Yoshiaki Yamamoto4, Haiyan He4, Tomomasa Sato2, Nobuyuki Matsuki2, Toshinori Oono4 (1.Saitama Univ., 2.Kanagawa Univ., 3.SAITEC, 4.Amaya Co., Ltd.)

[9p-PA1-12]Uniform Coating and Estimation of Effective Sticking Coefficient in Three-Dimensional Nonwoven Strutures by Mist Chemical Vapor Deposition

〇Hajime Shirai1,2, Yoshiaki Yamamoto4, Heiyan He4, Hideki Kurihara3, Fumiya Kobayashi2, Hirotaka Sone1, Toshinori Ohno4 (1.Saitama Univ., 2.Kanagawa Univ., 3.SAITEC, 4.Amaya Co., Ltd.)

[9p-PA1-13]Sputter epitaxy of Zn1-xMgxO films on sapphire using thickness-controlled 3D MgO buffer layers

〇Hiroki Otsuyama1, Hibiki Noguchi1, Jocelyn Sutadharma1, Okumura Takamasa1, Kunihiro Kamataki1, Kazunori Koga1, Masaharu Shiratani1, Naho Itagaki1 (1.Kyushu Univ.)

[9p-PA1-14]Sputter epitaxy of Zn1-xMgxO films on sapphire: interface engineering with wurtzite MgO buffers and ZnO interlayers

〇(M2)Hibiki Noguchi1, Hiroki Otsuyama1, Kunihiro Kamataki1, Takamasa Okumura1, Kazunori Koga1, Haruki Kiyama1, Naho Itagaki1 (1.Kyushu Univ.)

[9p-PA1-15]Influence of Sn and Al Doping on the Crystal Structure and Electrical Properties
of ZnO Thin Films

〇Yutaka Adachi1 (1.NIMS)

[9p-PA1-16]Characteristics of IGZO thin films fabricated by mist CVD using precursor materials with various concentrations

〇Chiaki Watanabe1, Ryosuke Ohashi2, Sohaib Hassan2, Htet Su2, Toshiyuki Kawaharamura1,2,3 (1.School of Sys. Eng, 2.Graduate univ. of Eng, 3.Res. Inst)

[9p-PA1-17]Fabrication of PdCoOx thin films by mist CVD

〇ryoma yoshida1, Yuya morioka1, Kei Mizumoto2, ryosuke oohashi2, Sohaib Hassan2, Htet Su2, Tosiyuki Kawaharamura1,2,3 (1.Kochi Univ. of Tech., 2.Graduate School of Eng., 3.Res. Inst.)

[9p-PA1-18]Effect of Deposition and Post-Deposition Annealing Temperature on the Crystallization Behavior and Optical Properties of Mist-CVD-Deposited GaOx Thin Films on c-plane Sapphire Substrates

〇(B)Sora Nakashima1, Iori Yamasaki1, Shunsuke Enoki1, Misaki Nishikawa1, Masatoshi Koyama1, Akihiko Fujii1, Toshihiko Maemoto1 (1.Osaka Inst. of Tech.)

[9p-PA1-19]Defect-Level Behavior in UV/O3-Treated HVPE-Grown β-Ga2O3 Homoepitaxial Films

〇Yoshitaka Nakano1, Daiki Katsube2, Takashi Ogawa2, Yukari Ishikawa2, Kohei Sasaki3, Akito Kuramata3 (1.Chubu Univ., 2.JFCC, 3.Novel Crystal Technology)

[9p-PA1-20]Dislocation propagation behavior in HVPE-grown β-Ga2O3 epilayers on EFG substrates studied by synchrotron x-ray topography

〇(M1)Yuhi Ikeda1, Yongzhao Yao1,2, Daiki Katsube2, Yukari Ishikawa2 (1.Mie Univ., 2.JFCC)

[9p-PA1-21]Temperature Dependence of PL Lifetime in Near-band-edge Emission of Rocksalt Structured MgZnO

〇Satoshi Igarashi1, Ryosuke Nemoto1, Kyosuke Tanaka1, Tomohiro Yamaguchi1, Tohru Honda1, Takeyoshi Onuma1 (1.Kogakuin Univ.)

[9p-PA1-22]Growth of Bulk GeO2 by Flux Method and Its Optical Properties

〇Kazuki Shimazoe1, Masashi Kato1 (1.Nagoya Inst. Tech.)

[9p-PA1-23]Separation of p-type ZnO nanoparticles by electrophoresis

〇Daiki Hoshishima1, Toshiyuki Yoshida1, Yasuhisa Fujita1,2 (1.Shimane Univ., 2.SNCC Co., Ltd.)

[9p-PA1-24]Structural Analysis of Damage Induced by FIB processing in b-Ga2O3 substrate

〇SHOHEI HAYASHI1, Ai Hashimoto1, Naohiko Kawasaki1 (1.Toray Research Center Inc.)

[9p-PA1-25]Evaluation of dissolution behavior of β-Ga2O3 using electrolyzed water

〇Aoi Otsuka1, Taro Tsukada1, Toshinori Taishi1 (1.Shinshu Univ.)

[9p-PA1-26]Structural and Chemical State Characterization of NiO Thin Films Prepared by Mist-CVD

〇(M2)ENNONG NIE1, SONGYUE YING1, TOKIYOSHI MATSUDA1 (1.Kindai University)

[9p-PA1-27]First-principles study on interfaces between two phases of Ga2O3

〇Jun Nara1, Hiroyoshi Momida1,2, Takahiro Yamasaki1,2 (1.NIMS-MANA, 2.Univ. Osaka)

[9p-PA1-28]Optical Property Evaluation of Triethoxycaprylylsilane-Modified Zinc Oxide Nanoparticles and Their Basic Study for Cosmetic Applications

〇Nanami Hatanaka1, Mizuki Kashiwagi1, Yuki Kawasaki2, Fujita Yasuhisa1 (1.Shimane Univ., 2.AND Z)

[9p-PA1-29]Effects of ZnO(N) seed layers deposited on glass substrates at room temperature on ZnO:Al films

〇Yoshiharu Wada1, Masaharu Shiratani1 (1.Kyushu Univ.)

[9p-PA1-30]Correlation between Film Density and Flexibility of In-B-O Transparent Conductive Films Deposited via H2, O2, and H2O-Introduced Sputtering

〇Shu Ishigami1, Yuya Yasaki1, Yuma Matsufuji1, Shinya Aikawa1 (1.KOGAKUIN Univ.)

[9p-PA1-31]Al Amount Dependence of Zn Added AZO Transparent Conducive Films

〇Safaa Shikano1 (1.Shimane Univ.)

[9p-PA1-32]Improvement of PBS Stability in Amorphous IGZO TFTs by Non-Thermal Treatment

〇Koga Nakamura1, Ko Ishihara1, Yoshikazu Shin1, Shinya Aikawa1 (1.Kogakuin Univ.)

[9p-PA1-33]Threshold Voltage Control of Room-Temperature Fabricated a-IGZO TFTs
Using SiO2/Y2O3 Stacked Passivation Layers

〇Ko Ishihara1, Koga Nakamura1, Yuya Yasaki1, Shinya Aikawa1 (1.Kogakuin Univ.)

[9p-PA1-34]Fabrication and Room-Temperature Operation of flexible CO2 gas sensors using Electrostatic Spray Deposition

〇Masato Inoue1, Rikuto Sekimura1, Keisuke Shibata1, Kanata Tanaka1, Mutsumi Sugiyama1,2 (1.Tokyo Univ. Sci., 2.RIST)

[9p-PA1-35]Fabrication and Evaluation of TFT type CO2 Gas Sensors with Polar (100) Surfaces Preferentially Grown by Water Vapor Introduced Sputtering

〇(M1)Tomohiro Sakai1, Yuichiro Ebisawa1, Jeongmin Shin2, JinHyeok Cha2, Tomohiro Yamaguchi1, Shinya Aikawa1 (1.Kogakuin Univ., 2.Chonnam Univ.)

[9p-PA1-36]Fabrication of Flexible Transparent Oxide Antennas for 2.4 GHz Rectennas

〇(M1)Yuma Matsufuji1, Yuya Yasaki1, Shu Ishigami1, Shinya Aikawa1 (1.Kogakuin Univ.)

[9p-PA1-37]Effects of Annealing Temperature on Transfer Characteristics of Polycrystalline In2O3 TFTs Fabricated by a Vacuum-Ultraviolet Excimer-Light-Assisted Solution Process

〇(M2)Kazuki Ueda1, Ryunosuke Ohtani1, Akira Fujimoto1, Hideo Wada1, Masatoshi Koyama1, Akihiko Fujii1, Akihiro Shimizu2, Toshihiko Maemoto1 (1.Osaka Inst. of Tech., 2.Ushio Inc.)

[9p-PA1-38]Fabrication and Crystallinity Control of InAlxOy Oxide Thin Films by an Excimer Lamp Assisted Solution Process

〇(M1)Ryunosuke Ohtani1, Kazuki Ueda1, Hideo Wada1, Masatoshi Koyama1, Akihiko Fujii1, Akihiro Shimizu2, Toshihiko Maemoto1 (1.Osaka Inst. of Tech., 2.Ushio Inc.)

[9p-PA1-39]2.59-GHz oscillator with β-Ga2O3 MESFET fabricated using mist CVD

Hikaru Ikeda1, Takeru Wakamatsu1, Yuji Ando2, Hidemasa Takahashi2, Ryutaro Makisako2, Tetsuzo Ueda3, Jun Suda2, Katsuhisa Tanaka1, 〇Shizuo Fujita1, Hidetaka Sugaya3 (1.Kyoto Univ., 2.Nagoya Univ., 3.Panasonic)

[9p-PA1-40]Fabrication and Characterization of Multilayer Oxide Thin-Film Transistors with Ultrathin In2O3 Channels

〇(M2)Naoki Takada1, Akira Fujimoto1, Hideo Wada1, Masatoshi Koyama1, Akihiko Fujii1, Toshihiko Maemoto1 (1.Osaka Institute of Tech.)

[9p-PA1-41]Film thickness dependence of low-voltage protection elements based on ZnMgO/ZnO structures: Control of turn-on voltage and capacitance

〇Yoshimasa Tsujimoto1, Takashi Okuda1, Kensuke Kondo1, Takatoshi Tojo1, Naoyuki Tsukamoto1 (1.OTOWA ELECTRIC)

[9p-PA1-42]Fabrication and Nonlinear Response Evaluation of Reservoir Devices Using Oxide Networks

〇Chima Gerald Anumaka1, Yuito Makishima1, Yuki Kasama1, Shinya Aikawa1 (1.Kougakuin Univ.)

[9p-PA1-43]Polar Surface Control of In2O3 TFT-Based Gas Sensors for High-Sensitivity CO2

〇(M2)Yuichiro Ebisawa1, Haruki Ishikawa1, Tomohiro Sakai1, Shin Jeongmin2, JinHyeok Cha2, Tomohiro Yamaguchi1, Shinya Aikawa1 (1.Kogakuin Univ., 2.Chonnam National Univ.)

[9p-PA1-44]Ultraviolet Light Detecting Properties of ZnO, β-Ga2O3, and ZnGa2O4 Nanostructures Grown by Atmospheric-Pressure Chemical Vapor Deposition

〇Tomoaki Terasako1, Ryohei Ando1, Rio Horiuch1, Tomoya Yamada1, Masakazu Yagi2 (1.Ehime Univ., 2.Natl. Inst. Technol., Kagawa Coll.)

[9p-PA1-45]Annealing Temperature Dependence of Ga-Sn-O Based MSM UV Sensors

〇(M1)Seiya Nakata1, Matuda Tokiyoshi1 (1.Kindai Univ)

[9p-PA1-46]Etch pit evaluation of β-Ga2O3 (011) crystal by using wet etching method

〇Koji Sato1, Daiki Katsube1, Yongzhao Yao1,2, Maki Shimizu1, Hitrotaka Yamaguchi1, Yukari Ishikawa1 (1.JFCC, 2.Mie Univ.)

[9p-PA1-47]Phase Stability of Ambipolar Wide-Gap Semiconductor γ-GeO2 Toward Single Crystal Growth by TSFZ Technique

〇Asahi Ishii1, Kazuhiro Yamaki1, Akinobu Irie1 (1.Utsunomiya Univ.)

[9p-PA1-48]Search for Novel Solvents Toward Low-Temperature Growth of β-Ga2O3 Single Crystals

〇Yuto Kosaka1, Keito Iizuka1, Kazuhiro Yamaki1, Akinobu Irie1 (1.Utsunomiya Univ.)

[9p-PA1-49]Growth and Impurity Evaluation of α-Ga2O3 Films by Mist CVD Method using Gallium Oxide Polycrystalline Powder

〇(M1)Asato Terukina1, Ryuma Iida1, Soma Nishio1, Hinata Nakahachi1, Tohru Honda1, Takeyoshi Onuma1, Tomohiro Yamaguchi1 (1.Kogakuin Univ.)

[9p-PA1-50]Mist-CVD Growth of Hf-Based Gate Dielectric Films on Graphene

〇(M1)Toshiki Hayashi1, Abdul Kuddus2, Keiji Ueno3, Hong En Lim3, Hajime Shirai3,4, Shinichiro Mouri1 (1.Ritsumeikan Univ., 2.R-GIRO, 3.Saitama Univ., 4.Kanagawa Univ.)

[9p-PA1-51]Growth of β-Ga2O3 Single Crystals by the FZ Technique Using a Light-Absorbing Additive

〇Riku Hirato1, Yamaki Kazuhiro1, Irie Akinobu1 (1.Utsunomiya Univ.)

[9p-PA1-52]Effects of Low-Temperature Annealing on the Defect Properties of Flexible NiO/ZnO Diodes

〇Taigo Matsui1, Kana Ueda1,3, Mutsumi Sugiyama1,2 (1.Tokyo Univ. Sci., 2.RIST, 3.JSPS Research Fellow)
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