Presentation Information
[9p-PA1-50]Mist-CVD Growth of Hf-Based Gate Dielectric Films on Graphene
〇(M1)Toshiki Hayashi1, Abdul Kuddus2, Keiji Ueno3, Hong En Lim3, Hajime Shirai3,4, Shinichiro Mouri1 (1.Ritsumeikan Univ., 2.R-GIRO, 3.Saitama Univ., 4.Kanagawa Univ.)
Keywords:
High-k HfO2,Transferrable Dielectrics,Mist CVD
Flexible substrates have limited thermal stability, making the formation of high-quality oxide gate insulator films challenging. Van der Waals epitaxy on graphene, which has no dangling bonds, has attracted attention as a transferable inorganic thin-film technology for integrating functional materials onto flexible substrates. In this study, HfO2 and HfZrO thin films were deposited on graphene by mist CVD and subsequently transferred onto SiO2/Si substrates.Graphene on Cu(111) was used as the growth substrate. Hf(acac)4 and Zr(acac)4 dissolved in methanol were employed as precursor solutions. Nitrogen was used as both carrier and dilution gas. The films were deposited at 300 °C for 20 min. After deposition, PMMA was coated on the sample surface, and the Cu layer was removed by wet etching using an ammonium persulfate solution. The films were then transferred onto SiO2/Si substrates. Continuous transferred films with an area of approximately 5 mm × 5 mm were obtained. XPS measurements of the transferred samples revealed Hf 4f peaks, confirming the formation of Hf-based oxide thin films on graphene. These results demonstrate the feasibility of fabricating and transferring Hf-based oxide gate insulator films on graphene using mist CVD.