Presentation Information
[9p-PB2-1]Growth of Ultra-Low-Oxygen-Concentration Silicon Single Crystals by the Optical Floating Zone Method
〇Tsuyoshi Sato1, Kohei Kawai1, Taiki Emoto2, Yuki Maruyama2, Masanori Nagao2, Satoshi Watauchi2 (1.Carlit Co., Ltd., 2.Univ. of Yamanashi)
Keywords:
Silicon single crystals,Floating zone method,infrared optical floating zone method
Conventionally, techniques such as the Czochralski (CZ) method, casting, radio-frequency floating zone (RF-FZ) method, and magnetic-field-applied CZ (MCZ) method have been used to grow silicon single crystals. Recently, modern power devices and infrared optical elements require low-oxygen silicon. Although the crucible-free RF-FZ method is typically applied to meet this demand, it faces significant challenges regarding the need for highly dense feed rods and high production costs.In this study, we grew silicon single crystals using the crucible-free infrared optical floating zone (IR-FZ) method, which melts the material via infrared irradiation. We then evaluated the grown crystals in terms of their oxygen concentration, optical transmittance, and carrier lifetime.