Presentation Information
[9p-PB3-2]Circularly polarized photoluminescence properties of GaInNAs/GaNAs strain-compensated multiple quantum well structure
〇Wakana Utsu1, Eita Tagawa2, Ayano Morita2, Futa Sakai2, Hiroto Kise2, Yuma Suzuki2, Junichi Takayama2, Akihiro Murayama2, Satoshi Hiura2 (1.Hokkaido Univ., 2.IST, Hokkaido Univ.)
Keywords:
dilute nitride semiconductor,photoluminescence,circularly polarized light