The 87th JSAP Autumn Meeting 2026
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Session Details

Poster presentation15 Crystal Engineering : 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[9p-PB3-1~11]15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Wed. Sep 9, 2026 2:00 PM - 3:30 PM JST
Wed. Sep 9, 2026 5:00 AM - 6:30 AM UTC
PB3 (2nd Gymnasium)

[9p-PB3-1]Circularly polarized photoluminescence properties of dilute nitride InGaAsN quantum dots grown via a nitrogen leakage method

〇Ayano Morita1, Hiroto Kise1, Eita Tagawa1, Junichi Takayama1, Akihiro Murayama1, Satoshi Hiura1 (1.Hokkaido Univ.)

[9p-PB3-2]Circularly polarized photoluminescence properties of GaInNAs/GaNAs strain-compensated multiple quantum well structure

〇Wakana Utsu1, Eita Tagawa2, Ayano Morita2, Futa Sakai2, Hiroto Kise2, Yuma Suzuki2, Junichi Takayama2, Akihiro Murayama2, Satoshi Hiura2 (1.Hokkaido Univ., 2.IST, Hokkaido Univ.)

[9p-PB3-3]Photoluminescence properties of InGaAs quantum dots with a remote Si-doped layer

〇Futa Sakai1, Ayano Morita1, Yuma Suzuki1, Hiroto Kise1, Junichi Takayama1, Akihiro Murayama1, Satoshi Hiura1 (1.Hokkaido Univ.)

[9p-PB3-4]Evaluation of the thermodynamic stability of GaSbN via first-principles calculations for thermo-radiative diode applications

〇(M1)Hiroto Kawahara1, Yamato Kyuno1, Tetsuya Nakamura2, Keisuke Yamane1 (1.Toyohashi Tech, 2.JAXA)

[9p-PB3-5]Al0.25In0.75Sb/InSb Heterostructure on Metamorphic Buffer Layer to Realize High Sheet Electron Density and Low Sheet Resistance

〇Ryuto Machida1, Kouichi Akahane1, Shinsuke Hara1, Akifumi Kasamatsu1, Issei Watanabe1 (1.NICT)

[9p-PB3-6]MBE Growth and Characterization of Dilute Nitride InSbN Thin FIlms

〇Kosuke Teramae1, Takumi Magaribuchi1, Hiroyuki Yaguchi1, Sachie Fujikawa1 (1.Saitama Univ.)

[9p-PB3-7]MBE growth and characterization of Sn-doped InSb thin films

〇Takumi Magaribuchi1, Kosuke Teramae1, Hiroyuki Yaguchi1, Sachie Fujikawa1 (1.Saitama Univ.)

[9p-PB3-8]Nitrogen Concentration Dependence of Sb Surfactant Effect on Luminescence Properties of GaPN

〇Hibiki Saida1, Kazuya Yagi1, Momoko Nagamine1, Hiroyuki Yaguchi1, Shuhei Yagi1, Kengo Takamiya1, Yamato Kyuno2, Keisuke Yamane2 (1.Saitama Univ., 2.Toyohashi Univ. Tech)

[9p-PB3-9]Growth of GaAs/AlGaAs distributed Bragg reflectors on on-axis GaAs(111)B substrates
for {111}-oriented entangled photon emitters

〇Yusuke Hayashi1, Akihiro Ohtake1, Takaaki Mano1 (1.NIMS)

[9p-PB3-10]Validity evaluation of the deep-learning-based RHEED pattern classification during the quantum dot growth

〇Kei Bito1, Nobuhiko Ozaki1 (1.Wakayama Univ.)

[9p-PB3-11]Development of a Distributed Bragg Reflector for surface-emitting broadband light source applications

〇Kaita Tanaka1, Yuuki Nitta1, Nobuhiko Ozaki1 (1.Wakayama Univ.)
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