Presentation Information
[9p-PB4-3]Theoretical study on the doping of Sn atom in Ge thin film grown on GaSb substrates
〇Koji Ozawa1, Ryoken Tuji1, Iori Takeda1, Hibiki Bekku1, Yuji Hamamoto2, Koji Sueoka2 (1.Grad. School of Computer Science and Systems Engineering, Okayama Pref. Univ., 2.Dept. of Communication Engineering, Okayama Pref. Univ.)
Keywords:
GeSn,first principle calculation,formation energy