Session Details
[9p-PB4-1~7]15.5 Group IV crystals and alloys
Wed. Sep 9, 2026 2:00 PM - 3:30 PM JST
Wed. Sep 9, 2026 5:00 AM - 6:30 AM UTC
Wed. Sep 9, 2026 5:00 AM - 6:30 AM UTC
PB4 (2nd Gymnasium)
[9p-PB4-1]Exploration of Stable Structures in GeSnC Semiconductor Using DFT and Bayesian Optimization
〇(M1C)Ryoken Tsuji1, Koji Ozawa1, Iori Takeda1, Hibiki Bekku1, Yuji Hamamoto2, Koji Sueoka2 (1.Graduate School of Computer Science and Systems Engineering, Okayama Pref. Univ., 2.Department of Communication Engineering, Okayama Pref. Univ.)
[9p-PB4-2]Exploration of Stable SiSn Structures and Evaluation of Their Properties Using DFT+GA Simulations
〇Hibiki Bekku1, Sueoka Koji2, Noda Yusuke3,4 (1.Grad. Sch., Okayama Pref. Univ., 2.Okayama Pref. Univ., 3.Kyushu Inst. Technol., 4.Data Sci. and AI Res. Ctr., Kyushu Inst. Technol.)
[9p-PB4-3]Theoretical study on the doping of Sn atom in Ge thin film grown on GaSb substrates
〇Koji Ozawa1, Ryoken Tuji1, Iori Takeda1, Hibiki Bekku1, Yuji Hamamoto2, Koji Sueoka2 (1.Grad. School of Computer Science and Systems Engineering, Okayama Pref. Univ., 2.Dept. of Communication Engineering, Okayama Pref. Univ.)
[9p-PB4-4]Sputter Deposition and Characterization of Sb-Doped GeSn Thin Films
〇(M2)Takeru Yoshida1, Ryo Ishikawa2,3,4 (1.Grad. Sch. Eng., The Univ. of Osaka, 2.ULVAC, Inc., 3.OTRI-Osaka, 4.CSRN-Osaka)
[9p-PB4-5]Design Optimization of GeSn Photodetectors in the SWIR Wavelength Range for High-Sensitivity and High-Speed Operation
〇(M1)Shion Hirose1, Shonosuke Hirokawa1, Takahiro Tsukamoto1 (1.Univ. Electro-Comm.)
[9p-PB4-6]Effects of high-pressure annealing and MgO insertion on low-temperature SPC of a-Ge
〇(B)Tomoya Honda1, Yushi Fuchiwaki1, Haruki Yamada1, Kenichiro Takakura1, Taizoh Sadoh2, Isao Tsunoda1 (1.NIT,Kumamoto College, 2.Kyushu Univ.)
[9p-PB4-7]Effect of Hydrogen Plasma Exposure on Growth of Vertically Oriented Ge wires.
〇Shin-ichi Kobayashi1 (1.Tokyo Polytechnic Univ.)