[9p-PB5-1~3] 15.7 Crystal characterization, impurities and crystal defects

[9p-PB5-2] Correlative PL–Raman Analysis of Local Stress Field around Defects in HVPE-GaN Substrate

〇Olga Milikofu¹, Toshihiro Asada¹ (1.NISSAN ARC, Ltd.)

Keywords:

semiconductor,defect,stress field

In this study, confocal Raman and photoluminescence (PL) imaging was performed on the same area of free standing HVPE GaN substrate and evaluated stress field around local defects and its correlation with PL, as well as distribution of the stress field in the depth direction.