[9p-PB5-1~3] 15.7 Crystal characterization, impurities and crystal defects

[9p-PB5-3] X-ray diffraction and photoluminescence characterization of GaP:N fabricated by ion implantation

〇(M1)Yusei Matsumoto¹, Rashid Md. Mamun-Or¹, Yaguchi Hiroyuki¹, Yagi shuhei¹ (1.Saitama Univ.)

Keywords:

nitride semiconductors,solar cell,ion implatation