[9p-S1-1~7] State-of-the-art spintronics using layered materials

4:45 PM - 5:15 PM JST(7:45 AM - 8:15 AM UTC)

[9p-S1-7] Layered nitride thin films toward magnetic memories driven by orbital currents

〇Shinji Isogami¹ (1.NIMS)

Keywords:

Two-dimensional material,Layered nitride thin film,Magnetic memory device

Chromium nitride (Cr₂N) MXene thin films are a rare class of two-dimensional materials that can be grown by reactive sputtering. They also exhibit excellent phase stability, retaining their nitrogen content up to temperatures of approximately 650 °C without significant nitrogen desorption. We have successfully fabricated magnetic memory devices by integrating Cr₂N MXene with ferromagnetic layers and demonstrated field-free magnetization switching with a critical current density comparable to that of conventional W/CoFeB devices. These results suggest that layered nitride thin films, with Cr₂N MXene serving as a prototype material, have strong potential to become a key materials platform for the development of orbital-current-based spintronic devices.